MAIN CATEGORIES OF INTEREST INCLUDE: High Voltage Power Devices High voltage silicon based discrete devices (>200V) such as SJ-MOSFETs, IGBTs, thyristors and pn-diodes Low Voltage Power Devices and Power IC Technology Low voltage silicon based discrete power devices (<200V) and devices for power ICs of all voltage ranges Power IC Design Circuit design and demonstration using power IC technology platform GaN and Compound Materials GaN and compound semiconductor (e.g., AlN, GaAs) based power devices, technology and integration SiC and Other Materials SiC and other materials (e.g., Ga2O3, diamond) based power devices, technology and integration Module and Packaging Technologies Module and package technology for discrete power devices and power ICs IMPORTANT: ISPSD2025 will change the paper submission process. Note that Only 4-page full papers will be accepted. Traditional "Abstract Submission" will NOT be accepted. No late news session. ISPSD 2025 Secretariat c/o Convention Linkage, Inc. 2-17 Sakuramachi, Chuo-ku, Kumamoto City 860-0805, JAPAN Phone: +81-96-288-0882 Fax: +81-96-288-0883 Email: ISPSD2025@c-linkage.co.jp